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| SDM40E20LS DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE Features * * * Very Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance SOT-23 Dim A NEW PRODUCT Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.85 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.80 8 A B C B C Mechanical Data * * * * * * * * Case: SOT-23, Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Leads: Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code Type Code: KSW Weight: 0.004 grams (approx.) Ordering Information: See Page 3 TOP VIEW D E G H J K L M a E D G H K J L M All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Power Dissipation (Note 1) Typical Thermal Resistance Junction to Ambient (Note 1) Power Dissipation (Note 2) Typical Thermal Resistance Junction to Ambient (Note 2) Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IFM IFSM Pd RqJA Pd RqJA Tj, TSTG SDM40E20LS 20 14 0.4 2 225 444 300 333 -55 to +125 Unit V V A A mW C/W mW C/W C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 3) Forward Voltage Drop (Note 3) Leakage Current (Note 3) Total Capacitance Notes: @ TA = 25C unless otherwise specified Symbol V(BR)R VF IR CT Min 20 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 170 Max 3/4 0.310 0.430 100 250 3/4 Unit V V mA pF Test Conditions IR = 0.5mA IF = 0.1A IF = 0.5A VR = 10V VR = 20V f = 1MHz, Vr = 0VDC 1. Device mounted on FR-5 1.0 x 0.75 x 0.062 inch PCB pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration test pulse used to minimize self-heating effect. DS30298 Rev. 2 - 2 1 of 3 SDM40E20LS 0.40 10 IF, INSTANTANEOUS FWD CURRENT (A) NEW PRODUCT IF(AV), AVERAGE FORWARD CURRENT (A) 0.30 1.0 0.20 0.1 0.10 Tj = 25C 0 0 25 50 75 100 125 150 TT, TERMINAL TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 0.01 0 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 1000 Tj = 25C CT, CAPACITANCE (pF) 100 100 10 10 0 5 10 15 20 25 1.0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Fig. 4 Typ. Total Capacitance vs Reverse Voltage VR, REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics DS30298 Rev. 2 - 2 2 of 3 SDM40E20LS NEW PRODUCT Ordering Information (Note 4) Device SDM40E20LS-7 Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KSW KSW = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 2001 M Feb 2 March 3 Apr 4 2002 N May 5 Jun 6 2003 P Jul 7 Aug 8 2004 R Sep 9 Oct O 2005 S Nov N Dec D DS30298 Rev. 2 - 2 YM 3 of 3 SDM40E20LS |
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